Cite
C band microwave damage characteristics of pseudomorphic high electron mobility transistor.
MLA
Li, Qi-Wei, et al. “C Band Microwave Damage Characteristics of Pseudomorphic High Electron Mobility Transistor.” Chinese Physics B, vol. 30, no. 9, Sept. 2021, pp. 1–7. EBSCOhost, https://doi.org/10.1088/1674-1056/abf135.
APA
Li, Q.-W., Sun, J., Li, F.-X., Chai, C.-C., Ding, J., & Fang, J.-Y. (2021). C band microwave damage characteristics of pseudomorphic high electron mobility transistor. Chinese Physics B, 30(9), 1–7. https://doi.org/10.1088/1674-1056/abf135
Chicago
Li, Qi-Wei, Jing Sun, Fu-Xing Li, Chang-Chun Chai, Jun Ding, and Jin-Yong Fang. 2021. “C Band Microwave Damage Characteristics of Pseudomorphic High Electron Mobility Transistor.” Chinese Physics B 30 (9): 1–7. doi:10.1088/1674-1056/abf135.