Cite
Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress.
MLA
Yuan, Yi-Dong, et al. “Degradation of Gate-Recessed MOS-HEMTs and Conventional HEMTs under DC Electrical Stress.” Chinese Physics B, vol. 30, no. 7, July 2021, pp. 1–6. EBSCOhost, https://doi.org/10.1088/1674-1056/abe117.
APA
Yuan, Y.-D., Zhao, D.-Y., Cao, Y.-R., Wang, Y.-B., Shao, J., Chen, Y.-N., He, W.-L., Du, J., Wang, M., Peng, Y.-L., Zhang, H.-T., Fu, Z., Ren, C., Liu, F., Zhang, L.-T., Zhao, Y., Lv, L., Zhao, Y.-Q., Zheng, X.-F., & Zhou, Z.-M. (2021). Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress. Chinese Physics B, 30(7), 1–6. https://doi.org/10.1088/1674-1056/abe117
Chicago
Yuan, Yi-Dong, Dong-Yan Zhao, Yan-Rong Cao, Yu-Bo Wang, Jin Shao, Yan-Ning Chen, Wen-Long He, et al. 2021. “Degradation of Gate-Recessed MOS-HEMTs and Conventional HEMTs under DC Electrical Stress.” Chinese Physics B 30 (7): 1–6. doi:10.1088/1674-1056/abe117.