Effect of power ratio of side/top heaters on the performance and growth of multi-crystalline silicon ingots.

• A transient global model for the ingots growth process was constructed. • The effect of power ratio on the liquid-solid interface was simulated. • The effect of power ratio on the crystallization rate was simulated. • The flat liquid-solid interface can be obtained by increasing the power ratio. • The crystallization rate increases with the decrease of power ratio. A transient global model for the growth process of multi-crystalline silicon ingots was constructed and validated, and the effect of different power ratios of side/top heaters on the liquid–solid interfacial shape and the crystallization rate was simulated using CGSIM software. The results show that the flat liquid–solid interface can be obtained by increasing the power ratio of the side/top heaters to more than 1.8, and the crystallization rate increases with the decrease of power ratio, and the crystal growth period is shortened by the decrease of power ratio. [ABSTRACT FROM AUTHOR]