Cite
High sensitivity graphene-Al2O3 passivated InGaAs near-infrared photodetector.
MLA
Yang, Bokuan, et al. “High Sensitivity Graphene-Al2O3 Passivated InGaAs near-Infrared Photodetector.” Nanotechnology, vol. 32, no. 45, Nov. 2021, pp. 1–8. EBSCOhost, https://doi.org/10.1088/1361-6528/ac1a43.
APA
Yang, B., Zhao, Y., & Chen, J. (2021). High sensitivity graphene-Al2O3 passivated InGaAs near-infrared photodetector. Nanotechnology, 32(45), 1–8. https://doi.org/10.1088/1361-6528/ac1a43
Chicago
Yang, Bokuan, Yangyang Zhao, and Jun Chen. 2021. “High Sensitivity Graphene-Al2O3 Passivated InGaAs near-Infrared Photodetector.” Nanotechnology 32 (45): 1–8. doi:10.1088/1361-6528/ac1a43.