Cite
Modeling photoexcited carrier interactions in a solid sphere of a semiconductor material based on the photothermal Moore–Gibson–Thompson model.
MLA
Abouelregal, Ahmed E., et al. “Modeling Photoexcited Carrier Interactions in a Solid Sphere of a Semiconductor Material Based on the Photothermal Moore–Gibson–Thompson Model.” Applied Physics A: Materials Science & Processing, vol. 127, no. 11, Nov. 2021, pp. 1–14. EBSCOhost, https://doi.org/10.1007/s00339-021-04971-2.
APA
Abouelregal, A. E., Sedighi, H. M., & Sofiyev, A. H. (2021). Modeling photoexcited carrier interactions in a solid sphere of a semiconductor material based on the photothermal Moore–Gibson–Thompson model. Applied Physics A: Materials Science & Processing, 127(11), 1–14. https://doi.org/10.1007/s00339-021-04971-2
Chicago
Abouelregal, Ahmed E., Hamid M. Sedighi, and Abdullah H. Sofiyev. 2021. “Modeling Photoexcited Carrier Interactions in a Solid Sphere of a Semiconductor Material Based on the Photothermal Moore–Gibson–Thompson Model.” Applied Physics A: Materials Science & Processing 127 (11): 1–14. doi:10.1007/s00339-021-04971-2.