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Absolute surface energies of wurtzite (101¯1) surfaces and the instability of the cation-adsorbed surfaces of II–VI semiconductors.
- Source :
-
Applied Physics Letters . 11/15/2021, Vol. 119 Issue 20, p1-5. 5p. - Publication Year :
- 2021
-
Abstract
- We have investigated the wurtzite (10 1 ¯ 1) planes of five semiconductors, AlN, GaN, GaAs, ZnO, and ZnS. The absolute surface energies are obtained by using a series of wedge nanowire structures. A cation-adsorbed surface reconstruction, (1 × 1)X (X is the electropositive element of the semiconductor) adlayer, is found to have dramatically low energy under the cation-rich condition for AlN and GaN. A p electron draining mechanism is proposed to explain these results. We also developed a framework to analyze the stabilization mechanism of the unneutral surfaces. It suggests that the cation-adsorbed surfaces of II–VI semiconductors should be more unstable than the anion-adsorbed surfaces. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SEMICONDUCTORS
*WURTZITE
*SURFACE reconstruction
*GALLIUM nitride
*ZINC oxide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 119
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 153686261
- Full Text :
- https://doi.org/10.1063/5.0068226