Cite
1100 V, 22.9 mΩcm 2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation.
MLA
Hu, Jia-Wei, et al. “1100 V, 22.9 MΩcm 2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation.” IEEE Transactions on Electron Devices, vol. 68, no. 10, Oct. 2021, pp. 5009–13. EBSCOhost, https://doi.org/10.1109/TED.2021.3101184.
APA
Hu, J.-W., Jiang, J.-Y., Chen, W.-C., Huang, C.-F., Wu, T.-L., Lee, K.-Y., & Tsui, B.-Y. (2021). 1100 V, 22.9 mΩcm 2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation. IEEE Transactions on Electron Devices, 68(10), 5009–5013. https://doi.org/10.1109/TED.2021.3101184
Chicago
Hu, Jia-Wei, Jheng-Yi Jiang, Wei-Chen Chen, Chih-Fang Huang, Tian-Li Wu, Kung-Yen Lee, and Bing-Yue Tsui. 2021. “1100 V, 22.9 MΩcm 2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation.” IEEE Transactions on Electron Devices 68 (10): 5009–13. doi:10.1109/TED.2021.3101184.