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A Wafer-Level Packaged CMOS MEMS Pirani Vacuum Gauge.

Authors :
Xu, Wei
Wang, Xiaoyi
Pan, Xiaofang
Bermak, Amine
Lee, Yi-Kuen
Yang, Yatao
Source :
IEEE Transactions on Electron Devices. Oct2021, Vol. 68 Issue 10, p5155-5161. 7p.
Publication Year :
2021

Abstract

In this article, we report a wafer-level packaged Pirani vacuum gauge using the proprietary InvenSense CMOS MEMS technology. The micro Pirani vacuum gauge features three serpentine-shaped molybdenum thermistors on the suspended silicon-on-insulator (SOI) bridges, while the wiring gap of each serpentine-shaped silicon microbridge is 1.6 ${ {\mu }}\text{m}$. For the vacuum range of $5\times 10^{-{4}}$ –760 Torr, the CMOS MEMS Pirani gauge configured with a constant temperature interface circuit achieves a sensitivity of 0.414 V/Torr in a very fine vacuum regime, while its heating power is less than 21.3 mW. Moreover, the measured output of the micro Pirani gauge shows good agreement with a semi-empirical model, while the model predicts that the proposed Pirani gauge can measure a vacuum pressure as low as $2.6\times 10^{-{4}}$ Torr. The performance achieved by this Pirani vacuum gauge combined with its high level of integration makes it a promising Internet of Things (IoT) sensing node for vacuum monitoring in the industry. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
68
Issue :
10
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
153710667
Full Text :
https://doi.org/10.1109/TED.2021.3103486