Symmetric Reconfigurable Ferroelectric Transistor for Non-Volatile Memories to Diminish the Effects of Gate Leakage.

MLA

Thirumala, Sandeep Krishna, and Sumeet Kumar Gupta. “Symmetric Reconfigurable Ferroelectric Transistor for Non-Volatile Memories to Diminish the Effects of Gate Leakage.” IEEE Transactions on Electron Devices, vol. 68, no. 10, Oct. 2021, pp. 5335–39. EBSCOhost, https://doi.org/10.1109/TED.2021.3109569.

APA

Thirumala, S. K., & Gupta, S. K. (2021). Symmetric Reconfigurable Ferroelectric Transistor for Non-Volatile Memories to Diminish the Effects of Gate Leakage. IEEE Transactions on Electron Devices, 68(10), 5335–5339. https://doi.org/10.1109/TED.2021.3109569

Chicago

Thirumala, Sandeep Krishna, and Sumeet Kumar Gupta. 2021. “Symmetric Reconfigurable Ferroelectric Transistor for Non-Volatile Memories to Diminish the Effects of Gate Leakage.” IEEE Transactions on Electron Devices 68 (10): 5335–39. doi:10.1109/TED.2021.3109569.