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A Three-Stage Charge Pump With Forward Body Biasing in 28 nm UTBB FD-SOI CMOS.
- Source :
-
IEEE Transactions on Circuits & Systems. Part I: Regular Papers . Nov2021, Vol. 68 Issue 11, p4810-4819. 10p. - Publication Year :
- 2021
-
Abstract
- Energy harvesting techniques provide solutions for powering battery-free circuits or even for charging storage elements such as batteries or super capacitors. In this paper a self-starting switched-capacitor approach based on three-stage charge pump that is appropriate to thermoelectric and photo-voltaic energy harvesting, is carried out in a 28 nm ultra-thin buried oxide (UTBB) fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. By taking advantage of the FD-SOI substrate characteristics, the forward-body-biasing (FBB) technique is applied in order to improve switch conductances. In addition, a sizing exploration of standard N-type and flipped-well P-type devices operating as switches is advanced, in order to provide optimum balance between their conductances. Extensive simulation results validate the proper operation of the charge pump at a minimum input voltage of 150 mV, and show a maximum efficiency peak of 63.3% at an input voltage of 350 mV and load a current of 500 nA. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ON-chip charge pumps
*SUPERCAPACITORS
*ENERGY harvesting
*STORAGE battery charging
Subjects
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 68
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 153763201
- Full Text :
- https://doi.org/10.1109/TCSI.2021.3112993