Cite
An Analytical Model of Hot Carrier Degradation in LDMOS Transistors: Rediscovery of Universal Scaling.
MLA
Mahajan, Bikram Kishore, et al. “An Analytical Model of Hot Carrier Degradation in LDMOS Transistors: Rediscovery of Universal Scaling.” IEEE Transactions on Electron Devices, vol. 68, no. 8, Aug. 2021, pp. 3923–29. EBSCOhost, https://doi.org/10.1109/TED.2021.3084915.
APA
Mahajan, B. K., Chen, Y.-P., & Alam, M. A. (2021). An Analytical Model of Hot Carrier Degradation in LDMOS Transistors: Rediscovery of Universal Scaling. IEEE Transactions on Electron Devices, 68(8), 3923–3929. https://doi.org/10.1109/TED.2021.3084915
Chicago
Mahajan, Bikram Kishore, Yen-Pu Chen, and Muhammad Ashraful Alam. 2021. “An Analytical Model of Hot Carrier Degradation in LDMOS Transistors: Rediscovery of Universal Scaling.” IEEE Transactions on Electron Devices 68 (8): 3923–29. doi:10.1109/TED.2021.3084915.