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Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates.
- Source :
-
Membranes . Nov2021, Vol. 11 Issue 11, p848-848. 1p. - Publication Year :
- 2021
-
Abstract
- In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20770375
- Volume :
- 11
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Membranes
- Publication Type :
- Academic Journal
- Accession number :
- 153896151
- Full Text :
- https://doi.org/10.3390/membranes11110848