A Bulk Full-Gate SOI-LDMOS Device With Bulk Channel and Electron Accumulation Effect.

A novel LDMOS featuring bulk full gate (BFG) with bulk channel and electron accumulation effect, named BFG-LDMOS, is proposed and investigated. The BFG includes bulk gate oxide (BGO) that is inserted in the ${N}$ -drift and the full gate (FG) that is formed by the wide open base transistor (P-body/ ${N}$ -drift/P+). The gate potential is extended in the gate- ${N}$ -drift-drain (GND) region, and thus, the bulk channel of the P-body and electron accumulation effect of the ${N}$ -drift in the source- ${N}$ -drift-drain (SND) region is achieved, which significantly reduces the specific ON-resistance (${R}_{\text {ON,sp}}$). In addition, the P-body, ${N}$ -drift, and N+ drain are divided by the BGO, and the P-body/ ${N}$ -drift junction (PN1) sustains the breakdown electric field for both sides, which guarantees the breakdown voltage (BV) like conventional LDMOS. The 3-D simulation results indicate that the BV and ${R}_{\text {ON,sp}}$ are 249 V and 2.93 $\text{m}\Omega \cdot $ cm2 for the proposed BFG-LDMOS, respectively, and the Baliga’s figure of merit (FoM) is high up to 21 MW/cm2, which breaks through the silicon limit of the reduced surface field (RESURF). [ABSTRACT FROM AUTHOR]