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Deposition of nanostructured Sn doped Co3O4 films by a facile nebulizer spray pyrolysis method and fabrication of p-Sn doped Co3O4/n-Si junction diodes for opto-nanoelectronics.
- Source :
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Sensors & Actuators A: Physical . Dec2021:Part 1, Vol. 332, pN.PAG-N.PAG. 1p. - Publication Year :
- 2021
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Abstract
- • Undoped and Sn doped Co 3 O 4 thin films were prepared by JNSP method. • Spherical-like grains are observed from the FE-SEM images. • The optical band gap of Co 3 O 4 film is noticed to be increased after adding Sn ions. • We have fabricated an undoped and Sn doped p-Co 3 O 4 /n-Si junction diode for various concentrations. • We observed that the p-Sn@Co 3 O 4 /n-Si diodes are highly sensitive and appropriate for photodetection applications. [Display omitted] In this work, we have prepared Co 3 O 4 thin films for different doping level including 0, 2, 4, and 6 wt% by JNSP method and analyzed their structural, morphological, optical, and electrical properties by XRD, FE-SEM, EDX, UV-Vis, and current-voltage (I-V) characteristics. The XRD profiles confirm the cubic crystal structures of Sn doped Co 3 O 4 films. Spherical-like grains are observed from the FE-SEM images and were suppressed due to Sn doping. Also, the elements like Sn, Co, and O were confirmed by EDX analysis. The optical band gap of Co 3 O 4 film is noticed to be increased after adding Sn ions, which has been studied through UV-Vis spectroscopy. Most importantly, we have fabricated an undoped and Sn doped p-Co 3 O 4 /n-Si junction diode for various concentrations. The determined ideality factor of the p-Sn doped Co 3 O 4 /n-Si diodes were reduced for both under dark and light conditions. In addition, the calculated responsivity, quantum efficiency, and specific detectivity of the diodes were enhanced with forwarded voltage. The p-Sn@Co 3 O 4 /n-Si diode fabricated with 2 wt% was achieved maximum responsivity and quantum efficiency of R = 247.03 mA/W, QE = 95.7%, and D* = 2.84 × 1010 at 3 V. We observed that the p-Sn doped Co 3 O 4 /n-Si diodes are highly sensitive and appropriate for photo-detection applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09244247
- Volume :
- 332
- Database :
- Academic Search Index
- Journal :
- Sensors & Actuators A: Physical
- Publication Type :
- Academic Journal
- Accession number :
- 153928595
- Full Text :
- https://doi.org/10.1016/j.sna.2021.113067