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Observation of the crystalline orientation dependence of the semiconductor–metal transition for thermal oxidation induced VO2 films over amorphous quartz glasses.
- Source :
-
AIP Advances . Dec2021, Vol. 11 Issue 12, p1-7. 7p. - Publication Year :
- 2021
-
Abstract
- Polycrystalline VO2 films were obtained through a vacuum annealing of sputtered V-rich films over quartz substrates and were characterized with x-ray diffraction, field-emission scanning electron microscopy, and x-ray photoelectron spectroscopy, respectively. The semiconductor–metal transition (SMT) was studied with the temperature-variable electric resistances. It was seen that the VO2 film crystalline orientation changes with the O2 partial pressure during the vacuum annealing. We observed a relation between the thermal hysteresis of the SMT and the crystalline orientation of the monoclinic VO2 films. The (011) oriented monoclinic film presents a narrower thermal hysteresis and a larger transition amplitude as compared to the (200) orientated films. In addition, a transition shoulder appears in the thermal hysteresis of the SMT for the (200) oriented VO2 films during the cooling process and becomes absent for the (011) orientated VO2 films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 11
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- 154430329
- Full Text :
- https://doi.org/10.1063/5.0074628