Cite
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes.
MLA
Fregolent, Manuel, et al. “Impact of Thermal Annealing on Deep Levels in Nitrogen-Implanted β-Ga2O3 Schottky Barrier Diodes.” Journal of Applied Physics, vol. 130, no. 24, Dec. 2021, pp. 1–8. EBSCOhost, https://doi.org/10.1063/5.0065434.
APA
Fregolent, M., De Santi, C., Buffolo, M., Higashiwaki, M., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021). Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes. Journal of Applied Physics, 130(24), 1–8. https://doi.org/10.1063/5.0065434
Chicago
Fregolent, Manuel, Carlo De Santi, Matteo Buffolo, Masataka Higashiwaki, Gaudenzio Meneghesso, Enrico Zanoni, and Matteo Meneghini. 2021. “Impact of Thermal Annealing on Deep Levels in Nitrogen-Implanted β-Ga2O3 Schottky Barrier Diodes.” Journal of Applied Physics 130 (24): 1–8. doi:10.1063/5.0065434.