Impact of various NBTI distributions on SRAM performance for FinFET technology.

NBTI degradation of FinFET devices is stochastic due to the inevitable variations in manufacturing processes. The stochastic behavior of NBTI degradation is modeled with different ΔV TH distributions. Various leading semiconductor industries report different ΔV TH distributions like Gamma, Normal, and Dispersive Skellam (DS) to model the NBTI induced variability. In this work, different NBTI induced variability models from the literature are used to investigate the impact on circuit performance. The combined effect of time-zero and various NBTI induced variability distributions on SRAM read and write metrics is discussed in detail. NBTI degradation in SRAM depends on the stored data pattern. Hence, we also report the impact of stored data patterns on the SRAM metric. To further analyze the impact of ΔV TH distributions on SRAM metrics, the correlation between SRAM metrics is studied. • A close agreement between various reported ΔV TH distributions due to NBTI and generated distributions is obtained. • The impact of different ΔV TH distributions on SRAM static and dynamic metrics at FinFET technology is investigated. • This work also investigates the impact of stored data patterns with different NBTI induced variability on SRAM metrics. • The correlation between static and dynamic metrics is also studied for time-zero and after NBTI degradation. [ABSTRACT FROM AUTHOR]