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High performance encapsulation of transparent conductive polymers by spatial atomic layer deposition.
- Source :
-
Synthetic Metals . Mar2022, Vol. 284, pN.PAG-N.PAG. 1p. - Publication Year :
- 2022
-
Abstract
- Poly(3,4-ethylenedioxythiophene) (PEDOT) is a transparent conductive polymer widely used in flexible photonic and optoelectronic devices because of its excellent electrical and optical properties. However, its current range of applications is limited by its poor stability under high humidity and solar radiations. Encapsulation is an attractive solution to this problem and the development of a low-temperature and scalable deposition method is highly desirable. In this study, we report the use of spatial atomic layer deposition (SALD) to deposit ultrathin layers of ZnO, TiO 2 , and Al 2 O 3. These nanolayers maintain the electrical performance of the conductive polymer and its high optical transmittance. The use of SALD ensures low-cost and flexible processing with pinhole-free high-quality coatings at atmospheric pressure and high-throughput. The present study is the first to investigate the effect of various multilayer metal oxide encapsulations on the long-term stability of PEDOT-based transparent conductive materials under solar radiations. We demonstrate finally that bilayer TiO 2 /Al 2 O 3 and TiO 2 /ZnO coatings preserve the optoelectronic properties of three different PEDOT-based films, namely PEDOT:OTf (OTf = triflate), PEDOT:Sulf (Sulf = sulfate)and PEDOT:PSS (PSS = PolyStyreneSulfonate) films. [Display omitted] • PEDOT materials are encapsulated using spatial atomic layer deposition. • Deposition of nanolayers is an efficient method to preserve the electrical performances of highly conductive PEDOT. • Bilayer structures TiO 2 /ZnO and TiO 2 /Al 2 O 3 lead to the most effective protection. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03796779
- Volume :
- 284
- Database :
- Academic Search Index
- Journal :
- Synthetic Metals
- Publication Type :
- Academic Journal
- Accession number :
- 154760484
- Full Text :
- https://doi.org/10.1016/j.synthmet.2021.116995