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Praseodymium-Doped In-Sn-Zn-O TFTs With Effective Improvement of Negative-Bias Illumination Stress Stability.
- Source :
-
IEEE Transactions on Electron Devices . Jan2022, Vol. 69 Issue 1, p152-155. 4p. - Publication Year :
- 2022
-
Abstract
- In this work, amorphous praseodymium-doped In-Sn-Zn-O (ITZO-Pr) thin-film transistors (TFTs) were fabricated with improved negative-bias illumination stress (NBIS) stability under different radio frequency (RF) magnetron sputtering powers. The optimized ITZO-Pr TFTs presented field effect mobility ($\boldsymbol {\mu }_{\text{FE}}$) of 20.9 cm $^{2}\cdot {}\text{V}^{-1}\cdot {}\text{s}$ −1, steep subthreshold (SS) of 0.27 V/dec, and small threshold voltage shift (${\Delta } {V}_{\text{th}} = -2.12$ V) under NBIS (−20 V, 3600 s). All Pr-doped devices exhibited a reduction in light responsivity of more than one order of magnitude compared with ITZO TFTs. Moreover, after Pr doping, relaxation processes of photoelectrons changed and then the activation energy (${E}_{\text{a}}$) of light-induced electrons relaxation decreased, which enhanced the NBIS stability of ITZO TFTs effectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 69
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 154824483
- Full Text :
- https://doi.org/10.1109/TED.2021.3126278