Cite
8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer.
MLA
Liu, Jie-Long, et al. “8.7 W/Mm Output Power Density and 42% Power-Added-Efficiency at 30 GHz for AlGaN/GaN HEMTs Using Si-Rich SiN Passivation Interlayer.” Applied Physics Letters, vol. 120, no. 5, Jan. 2022, pp. 1–5. EBSCOhost, https://doi.org/10.1063/5.0080120.
APA
Liu, J.-L., Zhu, J.-J., Mi, M.-H., Zhu, Q., Liu, S.-Y., Wang, P.-F., Zhou, Y.-W., Zhao, Z.-Y., Zhou, J.-D., Zhang, M., Wu, M., Hou, B., Wang, H., Yang, L., Ma, X.-H., & Hao, Y. (2022). 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer. Applied Physics Letters, 120(5), 1–5. https://doi.org/10.1063/5.0080120
Chicago
Liu, Jie-Long, Jie-Jie Zhu, Min-Han Mi, Qing Zhu, Si-Yu Liu, Peng-Fei Wang, Yu-Wei Zhou, et al. 2022. “8.7 W/Mm Output Power Density and 42% Power-Added-Efficiency at 30 GHz for AlGaN/GaN HEMTs Using Si-Rich SiN Passivation Interlayer.” Applied Physics Letters 120 (5): 1–5. doi:10.1063/5.0080120.