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Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN.
- Source :
-
Journal of Luminescence . Apr2022, Vol. 244, pN.PAG-N.PAG. 1p. - Publication Year :
- 2022
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Abstract
- Photoluminescence (PL) spectra dependent on the excitation power and temperature of two different red-emitting InGaN/GaN trapezoidal multiple quantum wells (TMQWs), with GaN and AlN low-temperature interlayers (LTILs) between the InGaN well and GaN barrier layers, were investigated. It was found that compared with the TMQWs with GaN LTILs, the TMQWs with AlN LTILs have a better structural quality, more significant carrier-localizing effect, and superior internal quantum efficiency. The results can be explained by the fact that due to the stability of Al–N bond and strain-compensated effect of AlN, compared with the GaN LTIL, the AlN LTIL grown on the InGaN well layer with embedded In-rich quantum dots (QDs), cannot only reduce threading dislocation densities as confirmed by XRC measurements, but also prevent In atoms from diffusing from In-rich QDs to InGaN matrix and/or from the InGaN well to GaN barrier layer, thus suppressing degradation of the QDs and generation of non-radiative centers. • PL properties of two InGaN/GaN MQWs with GaN and AlN interlayers were studied. • AlN inertlayer can better suppress generation of threading dislocations than GaN one. • AlN inertlayer can better suppress diffusion of In atoms than GaN one. • AlN inertlayer can more effectively improve IQE of the MQWs than GaN one. • The IQE is improved due to better crystal quality and stronger localizing effect. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222313
- Volume :
- 244
- Database :
- Academic Search Index
- Journal :
- Journal of Luminescence
- Publication Type :
- Academic Journal
- Accession number :
- 155207018
- Full Text :
- https://doi.org/10.1016/j.jlumin.2022.118741