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An Improved Drain-Current-Conductance Method with Substrate Back-Biasing.

Authors :
Tan, C. B.
Chim, W. K.
Source :
IEEE Transactions on Electron Devices. Feb99, Vol. 46 Issue 2, p431. 3p. 4 Graphs.
Publication Year :
1999

Abstract

Deals with a study on drain-current-conductance method (DCCM) to investigate the effect of back-bias on LATID NMOSfet's. DCCM technique with back-bias effect; Experimental details; Results.

Subjects

Subjects :
*ELECTRIC conductivity
*ELECTRICAL engineering

Details

Language :
English
ISSN :
00189383
Volume :
46
Issue :
2
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
1552947
Full Text :
https://doi.org/10.1109/16.740913
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