Al and F co-doped ZnO films prepared by the SILAR method: Characterization and performance as active layers in TFTs.

Al and F co-doped ZnO thin films were deposited on glass and SiO 2 /Si substrates by the successive ionic layer adsorption and reaction method, at which AlF 3 was used as doping precursor. The resulting films showed high transparency and good adherence to the substrates. The X-ray diffraction analysis revealed that all the films had a wurtzite-type hexagonal structure with preferential orientation along the c -axis. The porous structure of the films, formed by matchstick-shaped structures, was modified as effect of increasing the AlF 3 concentration. That is, less porous films were obtained for higher AlF 3 concentrations. The optical transparency and bandgap of the film prepared with the highest concentration of the precursor dopant was about 88.57% and 3.27 eV, respectively. Thin film transistors were fabricated with (Al, F):ZnO films as active layers. The interconnectivity of grains was the most influencing factor in the electrical performance of the fabricated devices. Thus, the device with the least porous film had a saturation mobility of 1.362 × 10−2 cm2 V−1 s−1 and a threshold voltage of 7.2 V. • Al and F co-doped ZnO thin films were prepared by the SILAR method. • Wurtzite-type hexagonal structures grown with preferential orientation along the c-axis. • Doping agents contributed to the formation of less porous films. • Enhancement of the films' transmittance with the concentration of Al and F precursors. • The TFT with the best performance had a μ sat = 1.362 × 10−2 cm2 V−1 s−1 and V TH = 7.2 V. [ABSTRACT FROM AUTHOR]