Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range.

For silicon carbide power mosfets, high dv/dt in switching may bring about a high level of electromagnetic interference. This letter shows that the dv/dt rate decreases at lower load currents. A dynamic dv/dt control strategy is then proposed for switching loss reduction in the whole operating range, by maintaining the dv/dt at the maximum acceptable level. The effectiveness of the proposed control strategy is verified by an experiment, showing that the total switching loss can be reduced by as much as 22% at 30% load. Furthermore, the simulation shows that a power loss reduction of 11.4% can be obtained for an electric vehicle converter which typically operates at light loads for most of the time. [ABSTRACT FROM AUTHOR]