Epitaxial Ultrathin MgB 2 Films on C-Terminated 6H–SiC ($000\bar{1}$) Substrates Grown by HPCVD.

Smooth and uniform epitaxial ultrathin MgB2 films are desired for various electronic applications including hot-electron bolometers and single-photon detectors. However, the growth of ultrathin MgB2 films on SiC substrates using the Hybrid Physical-Chemical Vapor Deposition was dominated by the Volmer-Weber or island growth mode, which limited the minimum thickness for a conductive MgB2 film. Here we show the results of a study on the very early stage of the MgB2 film growth. We find that the root-mean-squared roughness and grain connectivity of ultrathin MgB2 films grown on C-terminated 6H-SiC($000\bar{1}$) substrate is much better than those on Si-terminated substrate. The result provides a simple solution to growing high-quality ultrathin MgB2 films for applications. [ABSTRACT FROM AUTHOR]