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Quantified density of performance-degrading near-interface traps in SiC MOSFETs.
- Source :
-
Scientific Reports . 3/8/2022, Vol. 12 Issue 1, p1-9. 9p. - Publication Year :
- 2022
-
Abstract
- Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work, we have applied a newly developed integrated-charge technique to measure the density of NITs that are active in the above-threshold region of commercial SiC MOSFETs. The results demonstrate that NITs trap about 10% of the channel electrons for longer than 500 ns. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20452322
- Volume :
- 12
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 155685077
- Full Text :
- https://doi.org/10.1038/s41598-022-08014-5