Effect of Nd doping on structural, dielectric, magnetic and ferroelectric properties of 0.8BiFeO3–0.2PbTiO3 solid solution.

The standard solid state reaction method has been used to synthesize solid solution 0.8Bi 1- x Nd x FeO 3 –0.2PbTiO 3 where x = 0.05, 0.10, 0.15 and 0.20 (BNFPT) x. The effect of Nd3+substitution on magnetic, ferroelectric, dielectric, and structural properties of 0.8BiFeO 3 -0.2PbTiO 3 (BNFPT) x have been studied. The X-Ray Diffraction and Raman study of the samples revealed that the tetragonal structure with P4mm space group and rhombohedral structure with R3c space group exists simultaneously. The SEM study reveals uniform grain scattering. The 0.8BiFeO 3 -0.2PbTiO 3 compound with Nd doping exhibits an increase in dielectric constant and reduce dielectric loss with respect to temperature and frequency. These features make the material as a promising candidate for the development of electronic device. At room temperature, all prepared samples exhibit weak ferro-magnetic behavior. However, a steady increase in residual magnetization was observed at 5 K. The magnetization result was found to be better than that of other rare earth doped BiFeO 3 -PbTiO 3 solid solution. Ferroelectric study of the sample ascertained the pinning effect with low residual polarization in hysteresis loops. The reduction of leakage current with Nd doping is promising candidate for range of applications. • Nd doped BiFeO 3 - PbTiO 3 solid solution with varying Nd compositions have been prepared by solid state reaction method. • The X-Ray Diffraction and Raman study revealed the coexistence of tetragonal and rhombohedral structures simultaneously. • Nd doping exhibits an increase in dielectric constant and reduce dielectric loss with respect to temperature and frequency. An anomaly in the dielectric constant (ε) is a signature of magnetoelectric (ME) coupling. • The magnetic properties were greatly enhanced with the increasing Nd content. • The reduction of leakage current with Nd doping is promising candidate for range of applications. [ABSTRACT FROM AUTHOR]