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Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration.
- Source :
-
Journal of Materials Science . Mar2022, Vol. 57 Issue 10, p5894-5912. 19p. 2 Diagrams, 2 Charts, 10 Graphs. - Publication Year :
- 2022
-
Abstract
- The effect of Co, Pd and Pt ultrathin films on the kinetics of the formation of Ni-silicide by reactive diffusion is investigated. 50 nm Ni/1 nm X/ 50 nm Ni (X = Co, Pd, Pt) deposited on Si(100) substrates are studied using in-situ and ex-situ measurements by X-ray diffraction (XRD). The presence of Co, Pd or Pt thin films in between the Ni layers delays the formation of the metal rich phase compared to the pure Ni/Si system and thus these films act as diffusion barriers. A simultaneous silicide formation (δ-Ni2Si and NiSi phases) different from the classic sequential formation is found during the consumption of the top Ni layer for which Ni has to diffuse through the barrier. A model for the simultaneous growth in the presence of a barrier is developed, and simulation of the kinetics measured by XRD is used to determine the permeability of the different barriers. Atom probe tomography (APT) of the Ni/Pd/Ni system shows that the Pd layer is located between the Ni top layer and δ-Ni2Si during the silicide growth, in accordance with a silicide formation controlled by Ni diffusion through the Pd layer. The effect of the barrier on the silicide formation and properties is discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222461
- Volume :
- 57
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 155721735
- Full Text :
- https://doi.org/10.1007/s10853-022-07012-2