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A SiC and Si Hybrid Five-Level Unidirectional Rectifier for Medium Voltage Applications.
- Source :
-
IEEE Transactions on Industrial Electronics . Aug2022, Vol. 69 Issue 8, p7537-7548. 12p. - Publication Year :
- 2022
-
Abstract
- Following the continuous development of wide bandgap (WBG) devices and multilevel converter technology, medium voltage active front ends are becoming promising in future high-power-density and high-power applications. However, the cost issue is one of the major drawbacks, which stops the WBG devices from being widely applied in high-power areas. This article proposes a silicon carbide (SiC) and silicon (Si) hybrid five-level unidirectional rectifier. It requires only four SiC MOSFETs with relatively low blocking voltage and four Si diodes. Meanwhile, by adding snubber capacitors, all the Si devices are with low-speed switching, and the voltage stresses of fast SiC MOSFETs are minimized. In this article, operational analysis and carrier-based phase-disposition pulsewidth modulation scheme for this circuit are discussed in detail. The capacitor voltage balancing and unity power factor are both realized. Simulation and scaled-down experimental results are demonstrated to verify the proposed rectifier. Furthermore, the comparison of the hybrid five-level rectifiers is given to show the advantages of the proposed rectifier in terms of voltage stress, efficiency, and cost. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02780046
- Volume :
- 69
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Industrial Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 155735645
- Full Text :
- https://doi.org/10.1109/TIE.2021.3104579