Synthesis of ferromagnetic thin films and engineering of their magnetic properties by Fe ion implantation in polycrystalline Pd.

[Display omitted] • Polycrystalline ferromagnetic films created by Fe ion implantation in 60 nm Pd. • Magnetic moments up to 4.8 Bohr magnetons per implanted Fe atom. • New model for net magnetic moment reproduces data with explainable deviations. • Fe concentration depth profile connected to magnetization. • Prediction and engineering of magnetic properties on nanometer scale is enabled. Ferromagnetic thin films were synthesized by implantation of Fe ions with energies between 40 keV and 120 keV in 60 nm of polycrystalline Pd. The possibility to engineer magnetic properties in such films through the Fe concentration depth profile was demonstrated. In-plane magnetic moments were measured both while varying the sample temperature at constant applied magnetic field, and varying the applied field at constant temperature. All samples were explicitly shown to exhibit ferromagnetism at sufficiently low temperature, with threshold temperatures in the range from 35 K to 140 K. Saturation moments at 5 K were between 3.5 and 4.6 Bohr magnetons per implanted Fe atom for implantation fluences between 5 × 1015 and 2.3 × 1016 ions/cm2. Coercivities were between 1 and 3 mT. The samples included in the study were carefully characterized with Rutherford backscattering spectrometry, and selected samples with elastic recoil detection analysis and cross-sectional transmission electron microscopy, providing information on Fe concentration profiles, impurity fractions, structure as well as sample modification during implantation. A new model was proposed to calculate the scaling of the films' magnetic moments with temperature from the Fe concentration profiles. The model qualitatively reproduced the data and quantitative differences were explained. It can thus be applied to predict the modification of the magnetic moment at a given temperature for a similar film when the implantation parameters are varied. [ABSTRACT FROM AUTHOR]