Cite
Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C.
MLA
Park, Hyeong Jin, et al. “Improvement in Performance of Indium Gallium Oxide Thin Film Transistor via Oxygen Mediated Crystallization at a Low Temperature of 200 °C.” Ceramics International, vol. 48, no. 9, May 2022, pp. 12806–12. EBSCOhost, https://doi.org/10.1016/j.ceramint.2022.01.151.
APA
Park, H. J., Kim, T., Kim, M. J., Lee, H., Lim, J. H., & Jeong, J. K. (2022). Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C. Ceramics International, 48(9), 12806–12812. https://doi.org/10.1016/j.ceramint.2022.01.151
Chicago
Park, Hyeong Jin, Taikyu Kim, Min Jae Kim, Hojae Lee, Jun Hyung Lim, and Jae Kyeong Jeong. 2022. “Improvement in Performance of Indium Gallium Oxide Thin Film Transistor via Oxygen Mediated Crystallization at a Low Temperature of 200 °C.” Ceramics International 48 (9): 12806–12. doi:10.1016/j.ceramint.2022.01.151.