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Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs.
- Source :
-
IEEE Transactions on Nuclear Science . Mar2022, Vol. 69 Issue 3, p429-435. 7p. - Publication Year :
- 2022
-
Abstract
- Pulsed-laser testing is used to accurately determine single-event latchup (SEL) thresholds for static random-access memories (SRAMs) with different body-tie-to-drain spacings on a mixed-signal application-specific integrated circuit (ASIC), a study that could not be completed using only broad-beam heavy-ion testing. Two distinct approaches were employed with the first approach, an empirical correlation method, exploiting the complementary nature of broad-beam heavy-ion and laser testing. Various single- and dual-port SRAMs exhibited SEL thresholds ranging from 1 MeV-cm2/mg to over 100 MeV-cm2/mg, with a dual-port device possessing the smallest body-tie-to-drain spacing being latchup immune at the highest available test conditions (>300 MeV-cm2/mg). These results have been used to inform a follow-on ASIC design resulting in a significant improvement in chip-level SEL sensitivity. The second approach, a calculational method, uses pulsed-laser measurements and charge-deposition modeling to predict linear energy transfer (LET) thresholds without heavy-ion data. This calculational approach agrees with the empirical approach and therefore shows promise as a predictive tool for SEL threshold estimation, but further validation is required. Overall, these approaches can be effective tools for evaluating SEL susceptibilities and mitigation strategies. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 69
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 155866797
- Full Text :
- https://doi.org/10.1109/TNS.2021.3129416