Cite
Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process.
MLA
Liao, Yaqiang, et al. “Improved Device Performance of Vertical GaN-on-GaN Nanorod Schottky Barrier Diodes with Wet-Etching Process.” Applied Physics Letters, vol. 120, no. 12, Mar. 2022, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0083194.
APA
Liao, Y., Chen, T., Wang, J., Cai, W., Ando, Y., Yang, X., Watanabe, H., Tanaka, A., Nitta, S., Honda, Y., Chen, K. J., & Amano, H. (2022). Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process. Applied Physics Letters, 120(12), 1–6. https://doi.org/10.1063/5.0083194
Chicago
Liao, Yaqiang, Tao Chen, Jia Wang, Wentao Cai, Yuto Ando, Xu Yang, Hirotaka Watanabe, et al. 2022. “Improved Device Performance of Vertical GaN-on-GaN Nanorod Schottky Barrier Diodes with Wet-Etching Process.” Applied Physics Letters 120 (12): 1–6. doi:10.1063/5.0083194.