Simulation analysis of cutting coolant flow field in fixed and free abrasive combined wire sawing polysilicon.

When fixed abrasive wire saw is used to cut polysilicon, free SiC abrasives are added into the cutting coolant to form the fixed and free abrasive combined wire sawing process, so as to impact and roll the as-sawn wafer surface to remove the ductile amorphous silicon layer. Then, the as-sawn wafer can be textured by acid etching technology. The movement characteristics of free abrasives in sawing area directly affect their lapping behavior and the morphology generation of as-sawn wafer surface. In this paper, the flow field characteristics of cutting coolant and the movement characteristics of free SiC abrasives in the sawing area were studied, when using an abrasive groups interval distribution diamond wire for sawing. A three-dimensional model of cutting coolant in sawing area was established. Based on FLUENT, the influences of wire speed, feed speed, wire pretensioning force, viscosity of cutting coolant and wire surface structure parameters on the concentration peak position of free SiC abrasives in the cutting coolant along the wire axial direction were analyzed. The results show that the concentration peak of free abrasives will gradually shift to both sides along the circumferential direction of the wire in the sawing area. The deflection angle and width angle of free abrasives concentration peak are only related to the length of the bare wire area, and decrease with the increase of its length. Comprehensively considering the hydrodynamic pressure effect in the bare wire area, reducing the wire speed and tension, and increasing the feed speed and cutting coolant viscosity are conducive to enhance the lapping effect of free SiC abrasives on the as-sawn wafer surface. The change of wire structure parameters has no regular effect on the lapping behavior of free SiC abrasives in the bare wire area. [ABSTRACT FROM AUTHOR]