Low-temperature diffusion bonding of Ti3Si(Al)C2 ceramic with Au interlayer.

Herein, a reliable diffusion bonding of Ti 3 Si(Al)C 2 ceramic is achieved by applying Au foil as an interlayer at 650 °C for 30 min with an axial pressure of 20 MPa. This novel method significantly decreases the bonding temperature, which is about 150 °C lower than the lowest bonding temperature from current research to the best of our knowledge. Maximum shear strength of 58 MPa is achieved at 650 °C among the bonding temperature range of 600 °C~800 °C. The microstructure evolution mechanism and the relationship between microstructure and mechanical property are discussed. The facile mutual diffusion of Au with de-intercalated Al and Si from Ti 3 Si(Al)C 2 is considered critical in achieving sound interfacial bonding. [ABSTRACT FROM AUTHOR]