Novel one-dimensional Ga2O3:Cr3+ nanofibers with broadband emission for near infrared LED sources.

NIR phosphor-converted light-emitting diodes (pc-LEDs) are of great importance for the next-generation smart light sources, while the performances of pc-LEDs are highly dependent on the NIR phosphors. In present study, one-dimensional (1D) Ga 2 O 3 : x Cr (x = 0, 0.25%, 0.5%, 0.75%, 1.0%, 1.25%) nanofibers with diameters about 250 nm were synthesized via an electrospinning route at low temperature of 700 °C and the nanoscale size paves a way for the Ga 2 O 3 : x Cr nanofibers used in miniature electronic devices. The photoluminescence excitation (PLE) spectrum exhibits two strong absorptions in the regions of 400–500 nm and 600–700 nm, which matches exceptionally well with the commercial blue light chips. Under 440 nm excitation, nanofibrous Ga 2 O 3 : x Cr samples show a broad emission from 650 to 840 nm, and the optimized Cr3+ concentration is x = 0.5% with a peak at 730 nm and a full width at half maximum (FWHM) of 140 nm. A NIR pc-LED was fabricated by combining the Ga 2 O 3 :0.5%Cr with a commercial blue LED chip. Furthermore, the blood vessels of the hand and the clearer images of flowers and cosmetics were captured by NIR camera under illuminating of the fabricated NIR pc-LED, which demonstrates the promise of the Ga 2 O 3 : x Cr nanofibers in NIR pc-LED applications. [Display omitted] • The Ga 2 O 3 : x Cr nanofibers were synthesized via an electrospinning route at low temperature. • The relationships between the performance and morphologies of NIR Ga 2 O 3 phosphors were studied. • NIR pc-LED shows the merits of Ga 2 O 3 nanofibers in biomedicine and night vision. [ABSTRACT FROM AUTHOR]