Effect of different concentrations of the precursor on the properties of chemically induced ZnSe thin films.

The properties of Zinc Selenide (ZnSe) thin films can be considerably varied by altering the concentration of precursor (Zinc acetate). As a starting material (precursor), zinc acetate and sodium selenosulphate were utilized. For solar applications, ZnSe is one of the most promising materials. The structural, chemical, optical, electrical, and photoelectric characteristics of ZnSe thin films were investigated on non-conducting glass substrates using a chemical bath deposition technique with varying concentration of zinc acetate (precursor) in an alkaline solution. Concentration affects the crystallinity, surface morphology, light absorption, photocurrent, and photo sensitivity of the films. • ZnSe thin films using four different concentrations of precursor (Zinc acetate) were prepared by CBD method. • Structural parameters i.e. particle size, strain, dislocation density and no. of crystallites per unit area were calculated. • Optical i.e. band gap, urbach energy, skin depth, absorption constant and coefficient were calculated. • Electrical parameters like dark conductivity, photoconductivity, carrier life time and trap depth were calculated. • By tuning structural, optical and electrical parameters of thin films, It can be used in various optoelectronic applications. [ABSTRACT FROM AUTHOR]