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A Fully Integrated Low-Power Hall-Based Isolation Amplifier With IMR Greater Than 120 dB.
- Source :
-
IEEE Transactions on Circuits & Systems. Part I: Regular Papers . Apr2022, Vol. 69 Issue 4, p1385-1394. 10p. - Publication Year :
- 2022
-
Abstract
- A CMOS Hall-based fully integrated isolation amplifier for differential voltage sensing is presented in this work. The design is fabricated in a $0.35 \mu \text{m}$ CMOS process in which the high voltage (HV) side of the amplifier contains a coil driver while the low voltage (LV) side includes a Hall-effect sensor, low-noise amplifier, programmable-gain amplifier, filter, and chopper switches. Another Hall sensor performs the digital isolation using the on-off keying (OOK) technique for clock recovery. The introduced prototype achieves above 120 dB of isolation mode rejection (IMR) at 60 Hz and operates at a continuous isolation working voltage of 0.6 kV. It has also a maximum nonlinearity of 0.64 %, an input-referred offset of 1 mV, a 40 dB full-scale signal-to-noise ratio over a 40 kHz bandwidth, and a spurious-free dynamic range of 64 dB. The silicon area for each of the two separate dices employed for the HV and LV side of the isolation amplifier is 1 mm2 with a power consumption of 7.6 mW and 9.9 mW respectively. The achieved miniaturized size of the isolation components, as well as their significantly low-power consumption, ensure the suitability of the proposed isolation amplifier for multi-channel readout circuit applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 69
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 156247795
- Full Text :
- https://doi.org/10.1109/TCSI.2021.3138301