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Responsivity enhancement techniques for CMOS source‐driven terahertz detectors.
- Source :
-
Microwave & Optical Technology Letters . Jun2022, Vol. 64 Issue 6, p1036-1041. 6p. - Publication Year :
- 2022
-
Abstract
- The size and asymmetry effects of MOSFET detectors operating in a source‐driven configuration on responsivity are discussed in this paper. Seven MOSFET detectors with different sizes and structures are fabricated in a standard 55 nm CMOS technology. At 2.58 THz, the measurement results show that for the symmetric device, the minimum size MOSFET can achieve a higher responsivity, and for the asymmetric device, when the ratio of the source channel width to the drain channel width reaches 4:1 or higher, the asymmetric detector can achieve a higher responsivity than the detector based on the minimum size device available in the process. The best responsivity of the 2.03 kV/W is achieved by the asymmetry structure MOSFET detector with the ratio of the source channel width to the drain channel width reaching 4:1. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08952477
- Volume :
- 64
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Microwave & Optical Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 156278040
- Full Text :
- https://doi.org/10.1002/mop.33241