Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO₂/Al₂O₃ by ALD.

MLA

Ni, Haozhi, et al. “Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO₂/Al₂O₃ by ALD.” IEEE Transactions on Electron Devices, vol. 69, no. 3, Mar. 2022, pp. 1069–76. EBSCOhost, https://doi.org/10.1109/TED.2022.3141036.

APA

Ni, H., Li, M., Li, X., Zhu, X., Liu, H., Xu, M., Wang, L., Qiu, S., & Peng, J. (2022). Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO₂/Al₂O₃ by ALD. IEEE Transactions on Electron Devices, 69(3), 1069–1076. https://doi.org/10.1109/TED.2022.3141036

Chicago

Ni, Haozhi, Min Li, Xiaohai Li, Xiwen Zhu, Hanhao Liu, Miao Xu, Lei Wang, Song Qiu, and Junbiao Peng. 2022. “Hysteresis Suppression of Carbon Nanotube Thin-Film Transistor Using Laminated HfO₂/Al₂O₃ by ALD.” IEEE Transactions on Electron Devices 69 (3): 1069–76. doi:10.1109/TED.2022.3141036.