Back to Search
Start Over
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling.
- Source :
-
Applied Physics Letters . 4/18/2022, Vol. 120 Issue 16, p1-5. 5p. - Publication Year :
- 2022
-
Abstract
- In this paper, we extensively characterize and model the threshold voltage instability in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric. Specifically, (i) the results indicate that the threshold voltage instability originates from electron trapping at gate dielectric border traps close to the Al2O3/β-Ga2O3 interface. (ii) Logarithmic kinetics were detected for both stress and recovery by means of a innovative fast-capacitance experimental setup, over more than seven decades of time; (iii) a generalized model, which is capable of accurately reproducing the experimental results, was proposed to explain this trend. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 120
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 156474607
- Full Text :
- https://doi.org/10.1063/5.0085068