A multi-energy level agnostic approach for defect generation during TDDB stress.

• Multi-energy level agnostic approach describes defects generation during time-dependent dielectric breakdown. • Defect generation is both fluence and energy-carrier-driven. • Considering the bond strength distribution, the accepted power-law trend for defect generation is naturally obtained by Monte Carlo simulations. • Low-frequency AC time to-breakdown increased compared to DC. A multi-energy level agnostic model is used to examine defect generation during time-dependent dielectric breakdown stress. When considering distributed bond strengths, Monte Carlo simulations show that the distinctive power-law increase of the generated defects with stress time is attained. The rate is strongly influenced by the width of the distribution. The time to breakdown in DC and AC unipolar simulations is proportional to the fluence and energy of the injected carriers. These findings are in line with thin oxide breakdown measurements, which demonstrate a fluence and energy-driven process. [ABSTRACT FROM AUTHOR]