Preface to Special Topic "Plasma Physics and Science in Current and Next Generation Semiconductor Process": Invited papers from The 8th International Conference on Microelectronics and Plasma Technology.

Plasmas 28, 053505 (2021).10.1063/5.0045947 12 J. Moreno, A. Khodaee, D. Okerstrom, M. P. Bradley, and L. Couëdel, " Time-resolved evolution of plasma parameters in a plasma immersion ion implantation source", Phys. However, there is still a lack of understanding of the plasma parameters in the complex mixture gas (radical/ion species, electron/ion energy distributions, temperature, etc.) and plasma physics (electron heating dynamics, electron kinetics, wave-particle interaction, dust plasma characteristics, etc.). The "Plasma Physics and Science in Current and Next Generation Semiconductor Process" Special Topic in I Physics of Plasmas i consists of articles on research presented at The 8th International Conference on Microelectronics and Plasma Technology (ICMAP), which was held in Hwaseong, South Korea, January 17-20, 2021.[1] The "Plasma Physics and Science in Current and Next Generation Semiconductor Process" Special Topic is devoted to understanding such plasma source, plasma parameters, plasma-surface interaction, and processing results in semiconductor process and its related fields, and to bring new insight from theory and experiment for the next generation of plasma process techniques. [Extracted from the article]