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Erratum: "Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes" [AIP Adv. 11, 065315 (2021)].

Authors :
Bian, Z.
Rae, K. J.
King, B. C.
Kim, D.
Li, G.
Thoms, S.
Childs, D. T. D.
Gerrard, N. D.
Babazadeh, N.
Reynolds, P.
Grant, J.
McKenzie, A. F.
Orchard, J. R.
Taylor, R. J. E.
Hogg, R. A.
Source :
AIP Advances. Apr2022, Vol. 12 Issue 4, p1-1. 1p.
Publication Year :
2022

Abstract

REFERENCE 1 Z. Bian, K. J. Rae, B. C. King, D. Kim, G. Li, S. Thoms, D. T. D. Childs, N. D. Gerrard, N. Babazadeh, P. Reynolds, J. Grant, A. F. McKenzie, J. R. Orchard, R. J. E. Taylor, and R. A. Hogg, "Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes", AIP Adv. 11, 065315 (2021).10.1063/5.0053535 There was an error in Eq. (3) of the original paper.[1] The correct form of this equation is HT <math display="block" overflow="scroll" xmlns="http://www.w3.org/1998/Math/MathML"><msub><mrow> </mrow><mrow> A </mrow></msub><mo>=</mo><mfrac><mrow> c </mrow><mrow><msub><mrow> n </mrow><mrow> a v </mrow></msub></mrow></mfrac><mfenced close=")" open="("><mrow><msub><mrow> </mrow><mrow><mn>0</mn></mrow></msub><mo>-</mo><msub><mrow> </mrow><mrow><mn>3</mn></mrow></msub></mrow></mfenced><mfenced close=")" open="("><mrow><mn>1</mn><mo>-</mo><mfrac><mrow><mn>8</mn><msup><mrow><msub><mrow> </mrow><mrow><mn>1</mn></mrow></msub></mrow><mrow><mn>2</mn></mrow></msup></mrow><mrow><msup><mrow><msub><mrow> </mrow><mrow><mn>0</mn></mrow></msub></mrow><mrow><mn>2</mn></mrow></msup><mo>-</mo><msup><mrow><msub><mrow> </mrow><mrow><mn>3</mn></mrow></msub></mrow><mrow><mn>2</mn></mrow></msup></mrow></mfrac></mrow></mfenced><mo>.</mo></math> ht (3) This error does not affect the results that were obtained in our research. Erratum: "Comparative analysis of void-containing and all-semiconductor 1.5 µm InP-based photonic crystal surface-emitting laser diodes" [AIP Adv. 11, 065315 (2021)]. [Extracted from the article]

Details

Language :
English
ISSN :
21583226
Volume :
12
Issue :
4
Database :
Academic Search Index
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
156623535
Full Text :
https://doi.org/10.1063/5.0089800