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Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control.
- Source :
-
IEEE Transactions on Circuits & Systems. Part I: Regular Papers . May2022, Vol. 69 Issue 5, p1883-1895. 13p. - Publication Year :
- 2022
-
Abstract
- Back-bias control is a new degree of freedom brought by fully-depleted silicon-on-insulator (FDSOI) CMOS technologies, which can be used to control the oscillation frequency of voltage-controlled ring oscillators (VCROs). The resulting VCRO architecture is called a back-bias-controlled oscillator (BBCO). This paper compares it with the conventional current-starved ring oscillator (CSRO) topology in terms of power consumption and phase noise figure-of-merit (FoM), while taking practical design constraints of process-voltage-temperature (PVT) robustness and frequency tuning range into account. The proposed comprehensive analysis takes advantage of relevant and compact analytical models, as well as extensive pre-layout simulation results. The comparison is made at four different target oscillation frequencies, which are representative of frequency synthesis for WiFi/Bluetooth/LPWAN wireless communications and of clock generation for smartphone/Internet-of-Things processors: 300 MHz, 868 MHz, 2.45 GHz, and 5.18 GHz. In 28-nm FDSOI technology, the results demonstrate that BBCOs can intrinsically reach 1.69 to $4.63\times $ lower minimum power consumption and slightly better FoM values than CSROs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 69
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 156630289
- Full Text :
- https://doi.org/10.1109/TCSI.2022.3144527