Cite
Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE
MLA
He, Yong-ning, et al. “Preparation and Characteristics of the Wide Gap Semiconductor Mg0.18Zn0.82O Thin Film by L-MBE.” Microelectronics Journal, vol. 36, no. 2, Feb. 2005, pp. 125–28. EBSCOhost, https://doi.org/10.1016/j.mejo.2004.11.005.
APA
He, Y., Zhang, J., Yang, X., Xu, Q., Liu, X., Zhu, C., & Hou, X. (2005). Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE. Microelectronics Journal, 36(2), 125–128. https://doi.org/10.1016/j.mejo.2004.11.005
Chicago
He, Yong-ning, Jing-wen Zhang, Xiao-dong Yang, Qing-an Xu, Xing-hui Liu, Chang-chun Zhu, and Xun Hou. 2005. “Preparation and Characteristics of the Wide Gap Semiconductor Mg0.18Zn0.82O Thin Film by L-MBE.” Microelectronics Journal 36 (2): 125–28. doi:10.1016/j.mejo.2004.11.005.