Cite
A Fast Short-Circuit Protection Method for SiC MOSFET Based on Indirect Power Dissipation Level.
MLA
Ouyang, Wenyuan, et al. “A Fast Short-Circuit Protection Method for SiC MOSFET Based on Indirect Power Dissipation Level.” IEEE Transactions on Power Electronics, vol. 37, no. 8, Aug. 2022, pp. 8825–29. EBSCOhost, https://doi.org/10.1109/TPEL.2022.3161741.
APA
Ouyang, W., Sun, P., Xie, M., Luo, Q., & Du, X. (2022). A Fast Short-Circuit Protection Method for SiC MOSFET Based on Indirect Power Dissipation Level. IEEE Transactions on Power Electronics, 37(8), 8825–8829. https://doi.org/10.1109/TPEL.2022.3161741
Chicago
Ouyang, Wenyuan, Pengju Sun, Minghang Xie, Quanming Luo, and Xiong Du. 2022. “A Fast Short-Circuit Protection Method for SiC MOSFET Based on Indirect Power Dissipation Level.” IEEE Transactions on Power Electronics 37 (8): 8825–29. doi:10.1109/TPEL.2022.3161741.