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Energy storage and charge-discharge performance of B-site doped NBT-based lead-free ceramics.

Authors :
Zhang, Yan-Song
Li, Wen-Hua
Tang, Xin-Gui
Meng, Ke
Zhang, Si-Yuan
Xiao, Xue-Zhan
Guo, Xiao-Bin
Jiang, Yan-Ping
Tang, Zhenhua
Source :
Journal of Alloys & Compounds. Aug2022, Vol. 911, pN.PAG-N.PAG. 1p.
Publication Year :
2022

Abstract

Dielectric ceramic materials with high energy-storage density and excellent charge-discharge performance are desirable for use in dielectric capacitors. In this study, (Na 0.5 Bi 0.5) 0.75 Sr 0.25 TiO 3 – x Nb 2 O 5 (denoted as NBSTN x) lead-free ceramics were prepared by a solid-state reaction method. Polarization-electric field hysteresis loops (P–E loops) reflected the energy storage characteristics of the NBSTN x ceramics. Introducing Nb into a pure NBST ceramic can reduce the large remnant polarization (P r) and make the P–E loops slimmer. Through repeated trials and calculations, the maximum recoverable energy-storage density (W rec ~ 3.25 J/cm3) and energy storage efficiency (η ~ 74.5%) were achieved for the NBSTN 0.03 ceramic at 140 kV/cm. We also tested the stability performance of the NBSTN x ceramics, where the NBSTN 0.03 ceramic exhibited the highest thermal stability (30–100 °C) and frequency stability (10–1000 Hz). The NBSTN 0.03 ceramic also had a fast discharge rate (<300 ns) and a good discharge energy-storage density (W d ~ 1.80 J/cm3). Therefore, the NBSTN 0.03 ceramic with a good energy-storage density and charge-discharge performance has excellent application prospects for practical dielectric capacitors. [Display omitted] • A strategy incorporating B-site doping to enhance energy storage performance. • A relatively high W rec of 3.25 J/cm3 and η of 74.5%. • Sample with 0.03 mol Nb doping shows relatively good temperature and frequency stability. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09258388
Volume :
911
Database :
Academic Search Index
Journal :
Journal of Alloys & Compounds
Publication Type :
Academic Journal
Accession number :
156810075
Full Text :
https://doi.org/10.1016/j.jallcom.2022.165074