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N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation.
- Source :
-
Materials (1996-1944) . May2022, Vol. 15 Issue 9, p3005-3005. 10p. - Publication Year :
- 2022
-
Abstract
- High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality N-polar GaN films were grown on a vicinal sapphire substrate with a 100 nm high-temperature (HT) AlN buffer layer (high V/III ratio) and without an intentional nitriding process. The smallest X-ray full width at half maximum (FWHM) values of the (002)/(102) plane were 237/337 arcsec. On the contrary, N-polar GaN film with an intentional nitriding process had a lower crystal quality. In addition, we investigated the effect of different substrate treatments 1 min before the high-temperature AlN layer's growth on the quality of the N-polar GaN films grown on different vicinal sapphire substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 15
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 156873578
- Full Text :
- https://doi.org/10.3390/ma15093005