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Internal Encapsulation for Lead Halide Perovskite Films for Efficient and Very Stable Solar Cells.

Authors :
Ge, Yansong
Ye, Feihong
Xiao, Meng
Wang, Haibing
Wang, Chen
Liang, Jiwei
Hu, Xuzhi
Guan, Hongling
Cui, Hongsen
Ke, Weijun
Tao, Chen
Fang, Guojia
Source :
Advanced Energy Materials. May2022, Vol. 12 Issue 19, p1-10. 10p.
Publication Year :
2022

Abstract

External encapsulation technique as a straightforward craft process has been adopted to prevent the infiltration of moisture and oxygen, thereby improving environmental stabilities of lead halide perovskite solar cells (PSCs). However, irreversible light‐induced degradation originating from various vacancies and ion diffusion or migration inside the device cannot be efficiently solved by external encapsulation. Herein, an internal encapsulation strategy by introducing NbCl5 at the buried tin oxide/perovskite interface and spin‐casting n‐butylammonium bromide on top of perovskite is developed to comprehensively passivate the vacancies and hence block the channels for ion diffusion or migration. The internal encapsulation strategy results in better homogeneous electron transport layer and effective vacancy passivation at the buried interface and simultaneously generates a more homogeneous, better crystallized perovskite in the vertical direction with significantly reduced residual PbI2. Furthermore, fewer oxygen vacancies and formation of ultrathin Nb2O5 lead to a better interfacial energy level alignment for electron transfer. As a result, power conversion efficiency (PCE) of the resulting PSCs is as high as 24.01%. More importantly, the device demonstrates an excellent stability, retaining 88% of its initial PCE at its maximum power point tracking measurement (under 100 mW cm–2 white light illumination at ≈55 °C temperature, in N2 atmosphere) after 1000 h. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
16146832
Volume :
12
Issue :
19
Database :
Academic Search Index
Journal :
Advanced Energy Materials
Publication Type :
Academic Journal
Accession number :
156968331
Full Text :
https://doi.org/10.1002/aenm.202200361